Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-08-22
2006-08-22
Wilczewski, Mary (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S622000, C438S643000, C438S648000, C438S653000, C438S656000, C438S660000, C438S687000, C438S688000
Reexamination Certificate
active
07094680
ABSTRACT:
A method of forming a tantalum nitride layer for integrated circuit fabrication is disclosed. In one embodiment, the method includes forming a tantalum nitride layer by chemisorbing a tantalum precursor and a nitrogen precursor on a substrate disposed in a process chamber. A nitrogen concentration of the tantalum nitride layer is reduced by exposing the substrate to a plasma annealing process. A metal-containing layer is then deposited on the tantalum nitride layer by a deposition process.
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paten
Seutter Sean M.
Xi Ming
Yang Michael X.
Applied Materials Inc.
Moser Patterson & Sheridan LLP
Thomas Toniae M.
Wilczewski Mary
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