Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2007-06-12
2007-06-12
Lake, Steven (Department: 2811)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S592000
Reexamination Certificate
active
10752386
ABSTRACT:
A method of forming a doped gate structure on a semiconductor device and a semiconductor structure formed in that method are provided. The method comprises the steps of providing a semiconductor device including a gate dielectric layer, and forming a gate stack on said dielectric layer. This latter step, in turn, includes the steps of forming a first gate layer on the dielectric layer, and forming a second disposable layer on top of the first gate layer. A fat spacer is formed round the first gate layer and the second disposable layer. The second disposable layer is removed, and ions are implanted in the first gate layer to supply additional dopant into the gate above the gate dielectric layer, while the fat disposable spacer keeps the implanted ions away from the critical source and drain diffusion regions.
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Furukawa Toshiharu
Horak David V.
Sekiguchi Akihisa
Arena Andrew O
International Business Machines - Corporation
Lake Steven
Li, Esq. Todd M. C.
Scully , Scott, Murphy & Presser, P.C.
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