Fluted via formation for superior metal step coverage

Details Fluted via formation for superior metal step coverage Fluted via formation for superior metal step coverage

1996-08-13

1998-05-05

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566441, 1566511, 1566571, 15665911, H01L 2100

Patent

active

057468842

ABSTRACT:
A method of forming a via in a interlevel dielectric of a semiconductor device wherein the via has a fluted sidewall. A semiconductor substrate is provided having a first conductive layer formed thereon. A dielectric layer is then formed on the first conductive layer. A photoresist layer is deposited on a dielectric layer and a contact opening is formed in the photoresist layer to expose a contact region of the dielectric layer. A first etch step is performed to remove portions of the dielectric layer proximal to the contact region to form a first stage of the fluted via. The first stage includes a first sidewall stage extending from an upper surface of the dielectric layer at an angle less than 50.degree.. The first stage of the fluted via extends a first lateral distance which is greater than a lateral dimension of the contact opening. A second etch step is then performed to further remove portions of the dielectric layer to form a second stage of the fluted via. The second stage includes a second sidewall stage extending from the first sidewall stage at a second angle between 40.degree. and 70.degree.. A third etch step is then performed to further remove portions of the dielectric layer to form a third and final stage of the fluted via. The fluted via extends from an upper surface of the dielectric layer to an upper surface of the first conductive layer. The third stage includes a third stage sidewall extending from said second stage sidewall to said upper surface of said first conductive layer at an angle between 60.degree. and 80.degree..

REFERENCES:
patent: 3986912 (1976-10-01), Alcorn et al.
patent: 4354897 (1982-10-01), Nakajima
patent: 4857141 (1989-08-01), Abe et al.
patent: 4978420 (1990-12-01), Bach
patent: 5591675 (1997-01-01), Kim et al.

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