Floating gate avalanche injection MOS transistors with high K di

Details Floating gate avalanche injection MOS transistors with high K di Floating gate avalanche injection MOS transistors with high K di

1998-01-27

1999-12-28

Whitehead, Jr., Carl

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438240, 438257, 438266, 438593, H01L 29788

Patent

active

060080914

ABSTRACT:
The specification describes intergate dielectrics between the floating silicon gate and the control silicon gate in MOS memory devices. The intergate dielectrics are composite structures of SiO.sub.2 --Ta.sub.2 O.sub.5 --SiO.sub.2 with the first SiO.sub.2 layer grown on the floating gate,, and all layers preferably produced in situ in an LPCVD reactor. After formation of the composite SiO.sub.2 --Ta.sub.2 O.sub.5 --SiO.sub.2 dielectric, it is annealed at low pressure to densify the SiO.sub.2 layers. Electrical measurements show that the charge trap density in the intergate dielectric is substantially lower than in layered dielectrics produced by prior techniques.

REFERENCES:
patent: 3878549 (1975-04-01), Yamazaki et al.
patent: 4613956 (1986-09-01), Paterson et al.
patent: 4630086 (1986-12-01), Sato et al.
patent: 4698787 (1987-10-01), Mukherjee et al.
patent: 4720323 (1988-01-01), Sato
patent: 4943836 (1990-07-01), Mori
patent: 5104819 (1992-04-01), Freiberger et al.
patent: 5619051 (1997-04-01), Endo
patent: 5739566 (1998-04-01), Ota

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