Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2011-04-26
2011-04-26
Lee, Eugene (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257S737000, C257S778000, C257SE23021, C257SE23073, C257SE21508, C438S612000, C438S614000
Reexamination Certificate
active
07932170
ABSTRACT:
A method includes forming a patterned buildup layer on a first surface of a dielectric layer, the patterned buildup layer including a patterned buildup layer opening exposing a trace coupled to the dielectric layer. A conductor layer is flash plated on the patterned buildup layer and within the patterned buildup layer opening. The patterned buildup layer opening is filled with a blanket conductive filler layer. The blanket conductive filler layer and the conductor layer are planarized to form a flip chip bump.
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Darveaux Robert Francis
Huemoeller Ronald Patrick
St. Amand Roger D.
Amkor Technology Inc.
Gumedzoe Peniel M
Gunnison McKay & Hodgson, L.L.P.
Hodgson Serge J.
Lee Eugene
LandOfFree
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