Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1998-08-20
1999-11-23
Trinh, Michael
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438593, 438931, H01L 21336, H01L 213205
Patent
active
059899581
ABSTRACT:
A memory is described which has memory cells that store data using hot electron injection. The data is erased through electron tunneling. The memory cells are described as floating gate transistors wherein the floating gate is fabricated using a conductive layer of microcrystalline silicon carbide particles. The microcrystalline silicon carbide particles are in contact such that a charge stored on the floating gate is shared between the particles. The floating gate has a reduced electron affinity to allow for data erase operations using lower voltages.
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Micro)n Technology, Inc.
Trinh Michael
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