Flash memory device with word lines of uniform width and...

Details Flash memory device with word lines of uniform width and... Flash memory device with word lines of uniform width and...

2008-07-24

2010-10-26

Zarneke, David A (Department: 2891)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

Reexamination Certificate

active

07820547

ABSTRACT:
A method for manufacturing a semiconductor device, the method including: forming a bit line in a semiconductor substrate; forming a plurality of word lines which intersect with the bit line at predetermined intervals on the semiconductor substrate; eliminating a portion of the plurality of word lines; forming an interlayer insulating film on the semiconductor substrate; and forming a metal plug which penetrates through the interlayer insulating film and is coupled to the bit line in a region where the portion of the plurality of word lines was eliminated.

REFERENCES:
patent: 5786273 (1998-07-01), Hibi et al.
patent: 6403431 (2002-06-01), Chung et al.
patent: 6544883 (2003-04-01), Ohuchi
patent: 6864173 (2005-03-01), Kim
patent: 2002/0022360 (2002-02-01), Kim et al.
patent: 2003/0040152 (2003-02-01), Liu et al.
patent: 2007013155 (2007-01-01), None

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