Flash memory device having high permittivity stacked dielectric

Details Flash memory device having high permittivity stacked dielectric Flash memory device having high permittivity stacked dielectric

1998-10-14

2000-04-11

Whitehead, Jr., Carl

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438593, 438594, 438761, 438763, 438201, 438211, H01L 21336

Patent

active

060487666

ABSTRACT:
A memory device having a high performance stacked dielectric sandwiched between two polysilicon plates and method of fabrication thereof is provided. A memory device, in accordance with an embodiment, includes two polysilicon plates and a high permittivity dielectric stack disposed between the two polysilicon plates. The high permittivity dielectric stack includes a relatively high permittivity layer and two relatively low permittivity buffer layers. Each buffer layer is disposed between the relatively high permittivity layer and a respective one of the two polysilicon plates. The high permittivity layer may, for example, be a barium strontium titanate and the buffer layers may each include a layer of silicon nitride adjacent the respective polysilicon plate and a layer of titanium dioxide between the silicon nitride and the barium strontium titanate. The new high performance dielectric layer can, for example, increase the speed and reliability of the memory device as compared to conventional memory devices.

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