FinFET and method of manufacturing the same

Details FinFET and method of manufacturing the same FinFET and method of manufacturing the same

2007-12-07

2010-11-30

Malsawma, Lex (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257SE21433

Reexamination Certificate

active

07842566

ABSTRACT:
A FinFET may include a semiconductor fin having a top surface and a sidewall having different crystal planes. A gate dielectric layer on the top surface and on the sidewall has different thicknesses. A gate electrode is formed on the gate dielectric layer across the top surface and sidewall of the semiconductor fin.

REFERENCES:
patent: 7071048 (2006-07-01), Son et al.
patent: 7381649 (2008-06-01), Chen et al.
patent: 2005/0035415 (2005-02-01), Yeo et al.
patent: 2005/0199920 (2005-09-01), Lee et al.
patent: 2005/0224890 (2005-10-01), Bernstein et al.
patent: 2006/0044915 (2006-03-01), Park et al.
patent: 10-2005-0041704 (2005-05-01), None
patent: 10-2006-0020938 (2006-03-01), None

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