Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Ball or nail head type contact – lead – or bond
Reexamination Certificate
2008-04-14
2010-12-28
Clark, Jasmine J (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Ball or nail head type contact, lead, or bond
C257S780000, C257S784000, C257S774000, C257S750000, C257S758000, C257S738000, C257SE23011, C257SE23015, C257SE23019, C257SE23020, C438S614000
Reexamination Certificate
active
07859122
ABSTRACT:
A structure and a method for forming the same. The structure includes a first dielectric layer, an electrically conductive bond pad on the first dielectric layer, and a second dielectric layer on top of the first dielectric layer and the electrically conductive bond pad. The electrically conductive bond pad is sandwiched between the first and second dielectric layers. The second dielectric layer includes N separate final via openings such that a top surface of the electrically conductive bond pad is exposed to a surrounding ambient through each final via opening of the N separate final via openings. N is a positive integer greater than 1.
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Daubenspeck Timothy Harrison
Gambino Jeffrey Peter
Muzzy Christopher David
Questad David L.
Sauter Wolfgang
Clark Jasmine J
International Business Machines - Corporation
Kotulak Richard M.
Schmeiser Olsen & Watts
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