Fin-JFET

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having junction gate

Reexamination Certificate

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C257SE21421

Reexamination Certificate

active

07927938

ABSTRACT:
Methods, devices, and systems integrating Fin-JFETs and Fin-MOSFETs are provided. One method embodiment includes forming at least on Fin-MOSFET on a substrate and forming at least on Fin-JFET on the substrate.

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