Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having junction gate
Reexamination Certificate
2011-04-19
2011-04-19
Sandvik, Benjamin P (Department: 2826)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having junction gate
C257SE21421
Reexamination Certificate
active
07927938
ABSTRACT:
Methods, devices, and systems integrating Fin-JFETs and Fin-MOSFETs are provided. One method embodiment includes forming at least on Fin-MOSFET on a substrate and forming at least on Fin-JFET on the substrate.
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El-Kareh Badih
Forbes Leonard
Brooks Cameron & Huebsch PLLC
Micro)n Technology, Inc.
Sandvik Benjamin P
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