Fin field effect transistor and method of manufacturing the...

Details Fin field effect transistor and method of manufacturing the... Fin field effect transistor and method of manufacturing the...

2011-01-18

2011-01-18

Pham, Hoai v (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S268000, C257SE21421

Reexamination Certificate

active

07871875

ABSTRACT:
Provided are a FinFET and a method of manufacturing the same. A FinFET may include at least one active fin, at least one gate insulating layer pattern, a first electrode pattern, a second electrode pattern and at least one pair of source/drain expansion regions. The at least one active fin may be formed on a substrate. The at least one gate insulating layer pattern may be formed on the at least one active fin. The first electrode pattern may be formed on the at least one gate insulating layer pattern. Further, the first electrode pattern may be intersected with the at least one active fin. The second electrode pattern may be formed on the first electrode pattern. Further, the second electrode pattern may have a width greater than that of the first electrode pattern. The at least one pair of source/drain expansion regions may be formed on a surface of the at least one active fin on both sides of the first electrode pattern. Thus, the FinFET may have improved capacity and reduced GIDL current.

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