Fin FET and method of fabricating same

Details Fin FET and method of fabricating same Fin FET and method of fabricating same

2007-05-15

2007-05-15

Chen, Jack (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S176000, C438S589000

Reexamination Certificate

active

11050915

ABSTRACT:
A fin field effect transistor (fin FET) is formed using a bulk silicon substrate and sufficiently guarantees a top channel length formed under a gate, by forming a recess having a predetermined depth in a fin active region and then by forming the gate in an upper part of the recess. A device isolation film is formed to define a non-active region and a fin active region in a predetermined region of the substrate. In a portion of the device isolation film a first recess is formed, and in a portion of the fin active region a second recess having a depth shallower than the first recess is formed. A gate insulation layer is formed within the second recess, and a gate is formed in an upper part of the second recess. A source/drain region is formed in the fin active region of both sides of a gate electrode.

REFERENCES:
patent: 5675164 (1997-10-01), Brunner et al.
patent: 6242783 (2001-06-01), Ohmi et al.
patent: 6413862 (2002-07-01), Farnworth et al.
patent: 6525403 (2003-02-01), Inaba et al.
patent: 6562665 (2003-05-01), Yu
patent: 2006/0105529 (2006-05-01), Lee
patent: 2006/0231907 (2006-10-01), Kim et al.

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