Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-05-09
2006-05-09
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S287000, C438S785000
Reexamination Certificate
active
07041546
ABSTRACT:
In a capacitor of an MIM (Metal-Insulator-Metal) structure, a silicon-containing high dielectric film (e.g., a hafnium silicate film) containing a silicon atom, as well as a silicon-free high dielectric film (e.g., a tantalum oxide film) containing no silicon atom is interposed between a lower electrode film and an upper electrode film which are made of metal or metal compound. By adding the silicon-containing high dielectric film, a leak current can be suppressed and the change in capacitor capacity accompanied with the change in applied voltage can be reduced.
REFERENCES:
patent: 6586349 (2003-07-01), Jeon et al.
patent: 6713846 (2004-03-01), Senzaki
patent: 6790755 (2004-09-01), Jeon
patent: 6867101 (2005-03-01), Yu
patent: 2002/0106536 (2002-08-01), Lee et al.
patent: 2003/0194853 (2003-10-01), Jeon
Choi Dong-Kyun
Fujita Hirotake
Fujiwara Tomonori
Furuya Haruhiko
Harada Katsushige
Fourson George
Smith , Gambrell & Russell, LLP
Tokyo Electron Limited
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