Etching a substrate: processes – Nongaseous phase etching of substrate – Irradiating – ion implanting – alloying – diffusing – or...
Reexamination Certificate
2006-05-16
2006-05-16
Hassanzadeh, Parviz (Department: 1763)
Etching a substrate: processes
Nongaseous phase etching of substrate
Irradiating, ion implanting, alloying, diffusing, or...
C438S705000
Reexamination Certificate
active
07045073
ABSTRACT:
A method for anisotropically and selectively removing a dielectric thin film layer from a substrate layer is disclosed, wherein the dielectric layer is subjected to ion implantation prior to wet etching. This method may be applied adjacent to a structure such as a gate electrode within a microelectronic structure to prevent undercutting of the dielectric material to be preserved between the gate electrode and the substrate layer, as may happen with more isotropic etching techniques.
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Arghavani Reza
Chau Robert
Hareland Scott A.
Lindert Nick
Culbert Roberts
Hassanzadeh Parviz
Intel Corporation
Plimier Michael D.
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