Film formation method and apparatus for semiconductor process

Coating processes – Direct application of electrical – magnetic – wave – or... – Plasma

Reexamination Certificate

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C427S578000, C438S792000

Reexamination Certificate

active

08080290

ABSTRACT:
A film formation method is used for forming a silicon nitride film on a target substrate by repeating a plasma cycle and a non-plasma cycle a plurality of times, in a process field configured to be selectively supplied with a first process gas containing a silane family gas and a second process gas containing a nitriding gas and communicating with an exciting mechanism for exciting the second process gas to be supplied. The method includes obtaining a relation formula or relation table that represents relationship of a cycle mixture manner of the plasma cycle and the non-plasma cycle relative to a film quality factor of the silicon nitride film; determining a specific manner of the cycle mixture manner based on a target value of the film quality factor with reference to the relation formula or relation table; and arranging the film formation process in accordance with the specific manner.

REFERENCES:
patent: 5874368 (1999-02-01), Laxman et al.
patent: 6165916 (2000-12-01), Muraoka et al.
patent: 6730614 (2004-05-01), Lim et al.
patent: 2002/0031618 (2002-03-01), Sherman
patent: 2002/0140041 (2002-10-01), Endoh
patent: 2003/0109107 (2003-06-01), Hsieh et al.
patent: 2003/0231684 (2003-12-01), Yagi et al.
patent: 2004/0147199 (2004-07-01), Hirano
patent: 2005/0255712 (2005-11-01), Kato et al.
patent: 2006/0286817 (2006-12-01), Kato et al.
patent: 2007/0234953 (2007-10-01), Kaushal et al.
patent: 2-93071 (1990-04-01), None
patent: 6-45256 (1994-02-01), None
patent: 2006-49809 (2006-02-01), None
patent: 2007-138295 (2007-06-01), None
Japanese Office Action issued on Sep. 6, 2011 for Application No. 2008-009926 with English translation.

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