Coating processes – Direct application of electrical – magnetic – wave – or... – Plasma
Reexamination Certificate
2009-01-14
2011-12-20
Meeks, Timothy (Department: 1715)
Coating processes
Direct application of electrical, magnetic, wave, or...
Plasma
C427S578000, C438S792000
Reexamination Certificate
active
08080290
ABSTRACT:
A film formation method is used for forming a silicon nitride film on a target substrate by repeating a plasma cycle and a non-plasma cycle a plurality of times, in a process field configured to be selectively supplied with a first process gas containing a silane family gas and a second process gas containing a nitriding gas and communicating with an exciting mechanism for exciting the second process gas to be supplied. The method includes obtaining a relation formula or relation table that represents relationship of a cycle mixture manner of the plasma cycle and the non-plasma cycle relative to a film quality factor of the silicon nitride film; determining a specific manner of the cycle mixture manner based on a target value of the film quality factor with reference to the relation formula or relation table; and arranging the film formation process in accordance with the specific manner.
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Japanese Office Action issued on Sep. 6, 2011 for Application No. 2008-009926 with English translation.
Chou Pao-Hwa
Hasebe Kazuhide
Matsunaga Masanobu
Nodera Nobutake
Satoh Jun
Meeks Timothy
Miller, Jr. Joseph
Smith , Gambrell & Russell, LLP
Tokyo Electron Limited
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