Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2005-07-26
2008-12-09
Nguyen, Thanh (Department: 2893)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S792000, C438S775000
Reexamination Certificate
active
07462571
ABSTRACT:
An impurity-doped silicon nitride or oxynitride film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas containing a silane family gas, a second process gas containing a nitriding or oxynitriding gas, and a third process gas containing a doping gas. This method alternately includes first to fourth steps. The first step performs supply of the first and third process gases to the field. The second step stops supply of the first to third process gases to the field. The third step performs supply of the second process gas to the field while stopping supply of the first and third process gases to the field, and includes an excitation period of exciting the second process gas by an exciting mechanism. The fourth step stops supply of the first to third process gases to the field.
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Chou Pao-Hwa
Hasebe Kazuhide
Kim Chaeho
Ogawa Jun
Okada Mitsuhiro
Nguyen Thanh
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Tokyo Electron Limited
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