Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Multiple layers
Reexamination Certificate
2011-04-12
2011-04-12
Lebentritt, Michael S (Department: 2829)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Multiple layers
C438S786000, C438S791000, C438S793000, C257SE21192, C257SE21267, C257SE21279, C257SE21482, C257SE21497
Reexamination Certificate
active
07923378
ABSTRACT:
A silicon-containing insulating film is formed on a target substrate by CVD, in a process field to be selectively supplied with a first process gas including di-iso-propylaminosilane gas and a second process gas including an oxidizing gas or nitriding gas. The film is formed by performing a plurality of times a cycle alternately including first and second steps. The first step performs supply of the first process gas, thereby forming an adsorption layer containing silicon on a surface of the target substrate. The second performs supply of the second process gas, thereby oxidizing or nitriding the adsorption layer on the surface of the target substrate. The second step includes an excitation period of supplying the second process gas to the process field while exciting the second process gas by an exciting mechanism.
REFERENCES:
patent: 4872938 (1989-10-01), Davis et al.
patent: 4904621 (1990-02-01), Loewenstein et al.
patent: 5248636 (1993-09-01), Davis et al.
patent: 5812403 (1998-09-01), Fong et al.
patent: 5935334 (1999-08-01), Fong et al.
patent: 6774040 (2004-08-01), Comita et al.
patent: 7297641 (2007-11-01), Todd et al.
patent: 7510984 (2009-03-01), Saito et al.
patent: 7704867 (2010-04-01), Kim et al.
patent: 2008/0145535 (2008-06-01), Lei et al.
patent: 2008/0207007 (2008-08-01), Thridandam et al.
patent: 2010/0189927 (2010-07-01), Sato et al.
patent: 2010/0190348 (2010-07-01), Akae et al.
patent: 2004-281853 (2004-10-01), None
Hasebe Kazuhide
Nakajima Shigeru
Ogawa Jun
Lebentritt Michael S
Smith , Gambrell & Russell, LLP
Tokyo Electron Limited
LandOfFree
Film formation method and apparatus for forming... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Film formation method and apparatus for forming..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Film formation method and apparatus for forming... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2622156