Field effect transistor with electroplated metal gate

Details Field effect transistor with electroplated metal gate Field effect transistor with electroplated metal gate

2005-11-22

2005-11-22

Sarkar, Asok Kumar (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

Reexamination Certificate

active

06967131

ABSTRACT:
Disclosed is a method for making a metal gate for a FET, wherein the metal gate comprises at least some material deposited by electroplating as well as an FET device comprising a metal gate that is at least partially plated. Further disclosed is a method for making a metal gate for a FET wherein the metal gate comprises at least some plated material and the method comprises the steps of: selecting a substrate having a top surface and a recessed region; conformally depositing a thin conductive seed layer on the substrate; and electroplating a filler gate metal on the seed layer to fill and overfill the recessed region.

REFERENCES:
patent: 6188120 (2001-02-01), Andricacos et al.
patent: 6255187 (2001-07-01), Horii
patent: 6391773 (2002-05-01), Andricacos et al.
patent: 6440830 (2002-08-01), Lopatin
patent: 6777317 (2004-08-01), Seibel et al.
patent: 6873048 (2005-03-01), Gao et al.
patent: 2004/0036129 (2004-02-01), Forbes et al.
patent: 2005/0037557 (2005-02-01), Doczy et al.
Misra, et al., “Electrical properties of Ru-based alloy gate electrodes for dual metal gate Si-CMIOS”,IEEE Electron Device Letters23 354 (2002).
Zhong, et al., “Properties of Ru-Ta Alloys as Gate Electrodes for NMOS and PMOS Silicon Devices”,IDEM 01467 (2001).

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