Field effect transistor with a high breakdown voltage and...

Details Field effect transistor with a high breakdown voltage and... Field effect transistor with a high breakdown voltage and...

2006-04-25

2006-04-25

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S305000, C438S318000, C438S391000, C438S447000, C257S288000, C257SE29148, C257SE29149

Reexamination Certificate

active

07033896

ABSTRACT:
An electric field effect transistor of high breakdown voltage and a method of manufacturing the same are disclosed. A recessed portion is formed at the channel region and is filled by a protective oxide layer. Lightly doped source/drain regions are formed under the protective oxide layer. The protective oxide layer protects the lightly doped source/drain regions. Accordingly, the protective oxide layer prevents the electric field from being concentrated to a bottom corner portion of the gate structure. In addition, the effective channel length is elongated since an electric power source is connected to heavily doped source/drain regions from an outside source of the transistor, instead of being connected to lightly doped source/drain regions.

REFERENCES:
patent: 5635417 (1997-06-01), Natsume
patent: 6465311 (2002-10-01), Shenoy
patent: 6483158 (2002-11-01), Lee
patent: 7-122657 (1995-05-01), None
patent: 00206957 (1999-04-01), None
patent: 00216321 (1999-05-01), None
patent: 2001-0084781 (2001-09-01), None

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