Ferroelectric memory

Details Ferroelectric memory Ferroelectric memory

1994-12-22

1996-07-23

Zarabian, A.

Static information storage and retrieval

Systems using particular element

Ferroelectric

365149, 365203, G11C 1122

Patent

active

055392792

ABSTRACT:
A highly reliable and high speed ferroelectric memory having a high degree of integration. In a ferroelectric memory having a multiple of memory cells M1, each constituted by one transistor and one ferroelectric capacitor, in the normal operation, the ferroelectric memory is used as a volatile memory in which a voltage on a storage node ST1 stores information in a DRAM mode. Both the electric potential at the plate PL1 of the ferroelectric capacitor and a precharge electric potential on a data line DL1(j) are Vcc/2. When the a power supply voltage is turned on, a polarization state is detected as a ferroelectric memory of a plate electric potential of Vcc/2 and a precharge electric potential of Vss (or Vcc) and the read operation is performed a FERAM mode. The switching between the DRAM mode and the FERAM mode is executed by generating a signal to designate the FERAM mode in the memory along with the turn-on of the power supply and by generating a signal to designate the DRAM mode after completion of the conversion operation from nonvolatile information to volatile information.

REFERENCES:
patent: 4873664 (1989-10-01), Eaton, Jr.
patent: 4974204 (1990-11-01), Miller
patent: 5010518 (1991-04-01), Toda
patent: 5297077 (1994-03-01), Imai et al.

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