Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-03-22
2011-03-22
Lee, Hsien-ming (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C438S003000, C257S751000, C257S767000, C257SE29164, C257SE27104, C257SE21663, C257SE21664
Reexamination Certificate
active
07910967
ABSTRACT:
A ferroelectric capacitor having a three-dimensional structure, a nonvolatile memory device having the same, and a method of fabricating the same are provided. The ferroelectric capacitor may include a trench-type lower electrode, at least one layer formed around the lower electrode, a ferroelectric layer (PZT layer) formed on the lower electrode and the at least one layer and an upper electrode formed on the ferroelectric layer. The at least one layer may be at least one insulating interlayer and the at least one layer may also be at least one diffusion barrier layer. The at least one layer may be formed of an insulating material excluding SiO2or may have a perovskite crystal structure excluding Pb.
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Korean Office Action dated Sep. 28, 2006.
Bae Byoung-jae
Kim Suk-pil
Koo June-mo
Park Young-soo
Shin Sang-Min
Harness & Dickey & Pierce P.L.C.
Lee Hsien-Ming
Parendo Kevin
Samsung Electronics Co,. Ltd.
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