Fast Mosfet with low-doped source/drain

Details Fast Mosfet with low-doped source/drain Fast Mosfet with low-doped source/drain

1999-03-02

2000-05-09

Fahmy, Wael

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438303, 438307, 438532, H01L 21336

Patent

active

06060364&

ABSTRACT:
A method (100) of forming a transistor (50, 80) includes forming a gate oxide (120) over a portion of a semiconductor material (56, 122) and forming a doped polysilicon film (124) having a dopant concentration over the gate oxide (122). Subsequently, the doped polysilicon film (124) is etched to form a gate electrode (52) overlying a channel region (58) in the semiconductor material (56, 122), wherein the gate electrode (52) separates the semiconductor material into a first region (60) and a second region (68) having the channel region (58) therebetween. The method (100) further includes forming a drain extension region (64) in the first region (60) and a source extension region (72) in the second region (68), and forming a drain region (62) in the first region (60) and a source region (70) in the second region (68). The source/drain formation is such that the drain and source regions (62, 70) have a dopant concentration which is less than the polysilicon film (124) doping concentration. The lower doping concentration in the source/drain regions (62, 70) lowers the junction capacitance and provides improved control of floating body effects when employed in SOI type processes.

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Silicon Processing For The VLSI Era, vol. 2: Process Integration, Chapter 2, "Isolation Technologies for Integrated Circuits", by Stanley Wolf Ph.D., pp. 66-78.

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