Fabrication process for MOSFET devices and a reproducible capaci

Details Fabrication process for MOSFET devices and a reproducible capaci Fabrication process for MOSFET devices and a reproducible capaci

1997-01-15

1998-08-11

Chang, Joni

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438239, 438233, H01L 218238, H01L 218242

Patent

active

057926816

ABSTRACT:
A process has been developed in which a capacitor structure can be simultaneously fabricated with NFET and PFET to be used in EEPROM, SRAM or DRAM cells. The process features the use of a silicon nitride layer, protecting an underlying capacitor dielectric layer from an oxidation ambient, presented during a subsequent NFET source and drain drive-in procedure.

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patent: 5401678 (1995-03-01), Jeong et al.
patent: 5547893 (1996-08-01), Sung
patent: 5633181 (1997-05-01), Hayashi

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