Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1997-01-15
1998-08-11
Chang, Joni
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438239, 438233, H01L 218238, H01L 218242
Patent
active
057926816
ABSTRACT:
A process has been developed in which a capacitor structure can be simultaneously fabricated with NFET and PFET to be used in EEPROM, SRAM or DRAM cells. The process features the use of a silicon nitride layer, protecting an underlying capacitor dielectric layer from an oxidation ambient, presented during a subsequent NFET source and drain drive-in procedure.
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Chang Tzong-Sheng
Chou Chen-Cheng
Ackerman Stephen B.
Chang Joni
Saile George O.
Taiwan Semiconductor Manufacturing Company , Ltd.
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