Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2005-05-17
2005-05-17
Smith, Matthew (Department: 2825)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S513000, C438S977000, C438S514000, C438S474000, C438S473000, C438S691000, C438S690000
Reexamination Certificate
active
06893907
ABSTRACT:
A method of fabricating a silicon-on-insulator structure having a silicon surface layer in a semiconductor workpiece, is carried out by maintaining the workpiece at an elevated temperature and producing an oxygen-containing plasma in the chamber while applying a bias to the workpiece and setting the bias to a level corresponding to an implant depth in the workpiece below the silicon surface layer to which oxygen atoms are to be implanted, whereby to form an oxygen-implanted layer in the workpiece having an oxygen concentration distribution generally centered at the implant depth and having a finite oxygen concentration in the silicon surface layer. The oxygen concentration in the silicon surface layer is then reduced to permit epitaxial silicon deposition.
REFERENCES:
patent: 2344138 (1944-03-01), Drummond
patent: 3109100 (1963-10-01), Gecewicz
patent: 3576685 (1971-04-01), Swann et al.
patent: 3907616 (1975-09-01), Wiemer
patent: 4116791 (1978-09-01), Zega
patent: 4176003 (1979-11-01), Brower et al.
patent: 4382099 (1983-05-01), Legge et al.
patent: 4385946 (1983-05-01), Finegan et al.
patent: 4434036 (1984-02-01), Hoerschelmann et al.
patent: 4465529 (1984-08-01), Arima et al.
patent: 4481229 (1984-11-01), Suzuki et al.
patent: 4500563 (1985-02-01), Ellenberger et al.
patent: 4521441 (1985-06-01), Flowers
patent: 4539217 (1985-09-01), Farley
patent: 4565588 (1986-01-01), Seki et al.
patent: 4698104 (1987-10-01), Barker et al.
patent: 4764394 (1988-08-01), Conrad
patent: 4778561 (1988-10-01), Ghanbari
patent: 4837172 (1989-06-01), Mizuno et al.
patent: 4867859 (1989-09-01), Harada et al.
patent: 4871421 (1989-10-01), Ogle et al.
patent: 4892753 (1990-01-01), Weng et al.
patent: 4912065 (1990-03-01), Mizuno et al.
patent: 4937205 (1990-06-01), Nakayama et al.
patent: 4948458 (1990-08-01), Ogle
patent: 5040046 (1991-08-01), Chhabra et al.
patent: 5061838 (1991-10-01), Lane et al.
patent: 5074456 (1991-12-01), Degner et al.
patent: 5106827 (1992-04-01), Borden et al.
patent: 5107201 (1992-04-01), Ogle
patent: 5229305 (1993-07-01), Baker
patent: 5270250 (1993-12-01), Murai et al.
patent: 5277751 (1994-01-01), Ogle
patent: 5288650 (1994-02-01), Sandow
patent: 5290382 (1994-03-01), Zarowin et al.
patent: 5312778 (1994-05-01), Collins et al.
patent: 5354381 (1994-10-01), Sheng
patent: 5435881 (1995-07-01), Ogle
patent: 5505780 (1996-04-01), Dalvie et al.
patent: 5514603 (1996-05-01), Sato
patent: 5520209 (1996-05-01), Goins et al.
patent: 5542559 (1996-08-01), Kawakami et al.
patent: 5561072 (1996-10-01), Saito
patent: 5569363 (1996-10-01), Bayer et al.
patent: 5572038 (1996-11-01), Sheng et al.
patent: 5587038 (1996-12-01), Cecchi et al.
patent: 5627435 (1997-05-01), Jansen et al.
patent: 5643838 (1997-07-01), Dean et al.
patent: 5648701 (1997-07-01), Hooke et al.
patent: 5653811 (1997-08-01), Chan
patent: 5654043 (1997-08-01), Shao et al.
patent: 5660895 (1997-08-01), Lee et al.
patent: 5674321 (1997-10-01), Pu et al.
patent: 5683517 (1997-11-01), Shan
patent: 5711812 (1998-01-01), Chapek et al.
patent: 5718798 (1998-02-01), Deregibus
patent: 5770982 (1998-06-01), Moore
patent: 5888413 (1999-03-01), Okumura et al.
patent: 5897752 (1999-04-01), Hong et al.
patent: 5911832 (1999-06-01), Denholm et al.
patent: 5935077 (1999-08-01), Ogle
patent: 5944942 (1999-08-01), Ogle
patent: 5948168 (1999-09-01), Shan et al.
patent: 5985742 (1999-11-01), Henley et al.
patent: 5994207 (1999-11-01), Henley et al.
patent: 5994236 (1999-11-01), Ogle
patent: 5998933 (1999-12-01), Shun'ko
patent: 6000360 (1999-12-01), Koshimuzu
patent: 6013567 (2000-01-01), Henley et al.
patent: 6020592 (2000-02-01), Liebert et al.
patent: 6041735 (2000-03-01), Murzin et al.
patent: 6050218 (2000-04-01), Chen et al.
patent: 6076483 (2000-06-01), Shintani et al.
patent: 6083324 (2000-07-01), Henley et al.
patent: 6096661 (2000-08-01), Ngo et al.
patent: 6101971 (2000-08-01), Denholm et al.
patent: 6103599 (2000-08-01), Henley et al.
patent: 6132552 (2000-10-01), Donohoe et al.
patent: 6150628 (2000-11-01), Smith et al.
patent: 6153524 (2000-11-01), Henley et al.
patent: 6155090 (2000-12-01), Rubensson
patent: 6164241 (2000-12-01), Chen et al.
patent: 6165376 (2000-12-01), Miyake et al.
patent: 6174450 (2001-01-01), Patrick et al.
patent: 6174743 (2001-01-01), Pangrle et al.
patent: 6180496 (2001-01-01), Farrens et al.
patent: 6182604 (2001-02-01), Goeckner et al.
patent: 6187110 (2001-02-01), Henley et al.
patent: 6207005 (2001-03-01), Henley et al.
patent: 6237527 (2001-05-01), Kellerman et al.
patent: 6239553 (2001-05-01), Barnes et al.
patent: 6248642 (2001-06-01), Donlan et al.
patent: 6265328 (2001-07-01), Henley et al.
patent: 6291313 (2001-09-01), Henley et al.
patent: 6291939 (2001-09-01), Nishida
patent: 6300643 (2001-10-01), Fang et al.
patent: 6303519 (2001-10-01), Hsiao et al.
patent: 6305316 (2001-10-01), DiVergilio et al.
patent: 6335536 (2002-01-01), Goeckner et al.
patent: 6339297 (2002-01-01), Sugai et al.
patent: 6341574 (2002-01-01), Bailey, III et al.
patent: 6344404 (2002-02-01), Cheung et al.
patent: 6348126 (2002-02-01), Hanawa et al.
patent: 6387719 (2002-05-01), Mrvos et al.
patent: 6392351 (2002-05-01), Shunko
patent: 6403453 (2002-06-01), Ono et al.
patent: 6410449 (2002-06-01), Hanawa et al.
patent: 6417078 (2002-07-01), Dolan et al.
patent: 6418874 (2002-07-01), Cox et al.
patent: 6426015 (2002-07-01), Xia et al.
patent: 6432260 (2002-08-01), Mahoney et al.
patent: 6433553 (2002-08-01), Goeckner et al.
patent: 6453842 (2002-09-01), Hanawa et al.
patent: 6461933 (2002-10-01), Houston
patent: 6468388 (2002-10-01), Hanawa et al.
patent: 6494986 (2002-12-01), Hanawa et al.
patent: 6511899 (2003-01-01), Henley et al.
patent: 6514838 (2003-02-01), Chan
patent: 6528391 (2003-03-01), Henley et al.
patent: 6551446 (2003-04-01), Hanawa et al.
patent: 6559408 (2003-05-01), Smith et al.
patent: 6582999 (2003-06-01), Henley et al.
patent: 6593173 (2003-07-01), Anc et al.
patent: 6632324 (2003-10-01), Chan
patent: 6645828 (2003-11-01), Farrens et al.
patent: 6679981 (2004-01-01), Pan et al.
patent: 6780759 (2004-08-01), Farrens et al.
patent: 20010017109 (2001-08-01), Liu et al.
patent: 20010042827 (2001-11-01), Fang et al.
patent: 20020047543 (2002-04-01), Sugai et al.
patent: 20030211705 (2003-11-01), Tong et al.
patent: 20040092084 (2004-05-01), Rayssac
patent: 20040126993 (2004-07-01), Chan et al.
patent: 0 546 852 (1993-06-01), None
patent: 0 836 218 (1998-04-01), None
patent: 0 964 074 (1999-12-01), None
patent: 1 111 084 (2001-06-01), None
patent: 1 191 121 (2002-03-01), None
patent: 59-86214 (1984-05-01), None
patent: 59-218728 (1984-12-01), None
patent: 62-120041 (1987-06-01), None
patent: WO 9900832 (1999-01-01), None
patent: WO 0111650 (2001-02-01), None
patent: WO 0225694 (2002-03-01), None
patent: WO 9318201 (2003-09-01), None
van de Ven, Evert P., Connick, I-Wen, and Harrus, Alain S., “Advantages of Dual Frequency PECVD for Deposition of ILD and Passivation Films”,IEEE, Proceedings of VMIC Conference, Jun. 12-13, 1990, pp. 194-201.
Zhang, B.C., and Cross, R.C., “A high power radio frequency transformer for plasma production,”Rev. Sci. Instrum., vol. 69, No. 1, Jan. 1998, pp. 101-108.
U.S. Appl. No.: 09/638,075, filed Aug. 11, 2000, entitled, “Externally Excited Torroidal Plasma Source,” By Hiroji Hanawa, et al.
Chediak, A., Scott, K., and Zhang, P., “SIMOX—The “Winner ” for 300 mm SOI Wafer Fabrication”,TICS 5, University of Berkley, California, pp. 1-6, Apr. 26, 2002.
Al-Bayati Amir
Collins Kenneth S.
Gallo Biagio
Hanawa Hiroji
Maydan Dan
Anya Igwe U.
Law Office of Robert M. Wallace
LandOfFree
Fabrication of silicon-on-insulator structure using plasma... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Fabrication of silicon-on-insulator structure using plasma..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Fabrication of silicon-on-insulator structure using plasma... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3381902