Fabrication of high-density capacitors for mixed signal/RF...

Details Fabrication of high-density capacitors for mixed signal/RF... Fabrication of high-density capacitors for mixed signal/RF...

2006-06-13

2006-06-13

Kennedy, Jennifer (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S396000, C438S240000

Reexamination Certificate

active

07060557

ABSTRACT:
A method for fabricating a capacitor on a semiconductor substrate is disclosed. The method may include simultaneously forming at least one via and at least one upper capacitor plate opening in a first dielectric layer having an underlying cap dielectric layer deposited over a first material region having a first conductive material within a conductive region and forming a trench above the via. The underlying cap dielectric layer may be modified in a way that increases its dielectric constant as a result of simultaneously be heated by a heat source and impinged with and energy beam. The method may also include filling the via, trench, and upper capacitor plate opening with a second conductive material resulting in an integrated circuit structure and employing CMP to remove any excess second conductive material from the integrated circuit structure.

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