Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-03-06
2009-11-03
Quach, Tuan N. (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S397000, C257S401000, C257SE29267
Reexamination Certificate
active
07612405
ABSTRACT:
A semiconductor structure includes a first semiconductor strip extending from a top surface of the semiconductor substrate into the semiconductor substrate, wherein the first semiconductor strip has a first height. A first insulating region is formed in the semiconductor substrate and surrounding a bottom portion of the first semiconductor strip, wherein the first insulating region has a first top surface lower than a top surface of the first semiconductor strip. A second semiconductor strip extends from a top surface of the semiconductor substrate into the semiconductor substrate, wherein the second semiconductor strip has a second height greater than the first height. A second insulating region is formed in the semiconductor substrate and surrounding a bottom portion of the second semiconductor strip, wherein the second insulating region has a second top surface lower than the first top surface, and wherein the first and the second insulating regions have substantially same thicknesses.
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Fu Chu-Yun
Hsu Yu-Rung
Yeh Chen-Nan
Yu Chen-Hua
Quach Tuan N.
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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