Fabrication methods for nonvolatile memory devices including ext

Details Fabrication methods for nonvolatile memory devices including ext Fabrication methods for nonvolatile memory devices including ext

1996-04-22

1998-10-13

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438596, H01L 218247

Patent

active

058211438

ABSTRACT:
A nonvolatile memory device includes an extended sidewall electrode which extends onto the substrate away from the sidewall insulating region. The sidewall electrode also preferably extends onto the outer face of the insulated control gate. The extended sidewall electrode is preferably formed by blanket forming a sidewall electrode layer and then patterning the blanket electrode layer to remove a portion thereof on the substrate face and on the outer face of the insulated control gate. Fabrication methods for high speed nonvolatile memory devices with reduced erase errors are thereby provided.

REFERENCES:
patent: 5268585 (1993-12-01), Yamauchi
patent: 5494838 (1996-02-01), Chang et al.

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