Fabricating method of semiconductor integrated circuits

Details Fabricating method of semiconductor integrated circuits Fabricating method of semiconductor integrated circuits

2007-08-21

2007-08-21

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S686000, C257SE21170

Reexamination Certificate

active

10020314

ABSTRACT:
A ruthenium electrode with a low amount of oxygen contamination and high thermal stability is formed by a chemical vapor deposition method. In the chemical vapor deposition method using an organoruthenium compound as a precursor, the introduction of an oxidation gas is limited to when the precursor is supplying, and the reaction is allowed to occur at a low oxygen partial pressure. Consequently, it is possible to form a ruthenium film with a low amount of oxygen contamination. Further, after formation of the ruthenium film, annealing at not less than the formation temperature is performed, thereby forming a ruthenium film with high thermal stability.

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Masahiko Hiratani, Toshihide Nabatame, Yuichi Matsui,, Yasuhiro Shimamoto, Yoshitaka Sasago, Yoshitaka Nakamura, Yuzuru Ohji, Isamu Asano and Shinichiro Kimura, “A Conformal Ruthenium electrode for MIM Capacitors in Gbit DRAMs Using the CVD Technology Based on Oxygen-Controlled Surface Reaction”, 2000 Symposium on VLSI Technology Digest of Technical Papers, pp. 102-103.

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