Fabricating method of dynamic random access memory

Details Fabricating method of dynamic random access memory Fabricating method of dynamic random access memory

1997-08-04

1998-08-18

Tsai, Jey

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438254, H01L 218242

Patent

active

057958050

ABSTRACT:
A fabricating method of a dynamic random access memory is provided. The characteristic of the method is the formation of a dielectric layer to protect a polysilicon layer of hemispheric grains, and thus, the slurry residue from chemical-mechanical polishing process is avoided. In addition, the dielectric layer and the oxide layer can be removed by the same step of wet etching without an additional process. The exposure limitation is not restricted by the shrinkage of the devices. Therefore, the polysilicon layer of hemispherical grains can be removed precisely as expected.

REFERENCES:
patent: 5354705 (1994-10-01), Mathews et al.
patent: 5494841 (1996-02-01), Dennison et al.

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