Exposure apparatus for controlling intensity of exposure radiati

Details Exposure apparatus for controlling intensity of exposure radiati Exposure apparatus for controlling intensity of exposure radiati

1989-08-31

1992-10-20

Porta, David P.

X-ray or gamma ray systems or devices

Specific application

Lithography

378 97, 378108, G21K 500

Patent

active

051577003

ABSTRACT:
An exposure apparatus usable with synchrotron radiation source wherein the synchrotron radiation is generated by electron injection into a ring. The exposure apparatus is to transfer a semiconductor element pattern of a mask onto a semiconductor wafer by the synchrotron radiation. The apparatus includes a shutter for controlling the exposure of the wafer. The shutter controls the exposure with the illuminance distribution on the wafer surface taken into account. The illuminance distribution is determined in response to the electron injection, and thereafter, the illuminance distribution is corrected in a predetermined manner. By this, the illuminance distribution data for controlling the shutter always correspond to the actual illuminance distribution. The entire shot areas of the semiconductor wafer are exposed with high precision.

REFERENCES:
patent: 4176281 (1979-11-01), Tischer et al.
patent: 4512657 (1985-04-01), Sakato
patent: 4804978 (1989-02-01), Tracy
patent: 4870452 (1989-09-01), Tanimoba et al.
patent: 4916322 (1990-04-01), Glavish et al.

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