Exhaust baffle for uniform gas flow pattern

Coating apparatus – Gas or vapor deposition

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Details

118728, 118729, 156345, 20429801, 20429807, 4272481, 437225, C23C 1600

Patent

active

054415683

ABSTRACT:
An arc shaped exhaust baffle having two ends that define a gap therebetween that is not directly accessible by the exhaust plenum, that provides improved process gas flow distribution in a semiconductor process chamber, has a plurality of apertures formed therethrough and distributed about a baffle circumference. The apertures communicate with an underlying exhaust plenum to generate a uniform gas flow across the substrate surface during substrate processing. The exhaust baffle has at least one offset passage formed therethrough that may be adapted to draw process gas across a substrate surface at an acute angle relative thereto from the gap, and thereby provide an exhaust pattern that influences the process gas flow about the entire circumference of the substrate. An alternative embodiment of the invention provides a exhaust baffle having two baffle sections in facing abutment with one another that define a plurality of apertures and at least one offset passage for conducting process gas from the process chamber from the gap.

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patent: 5304248 (1994-04-01), Cheng
patent: 5328722 (1994-07-01), Ghanayem

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