Etching titanium nitride using carbon-fluoride and carbon-oxide

Details Etching titanium nitride using carbon-fluoride and carbon-oxide Etching titanium nitride using carbon-fluoride and carbon-oxide

1994-01-27

1995-03-21

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156644, 156656, 156657, 1566591, 252 791, B44C 122, C03C 1500

Patent

active

053992377

ABSTRACT:
A process for etching titanium nitride on a substrate 20 is described. In the process, a substrate 20 having a titanium nitride layer 24c thereon, and an insulative oxide layer 26 on the titanium nitride layer 24c is placed in a process chamber 42. Either a single stage, or a multiple stage version, of the process is then effected to etch the insulative oxide and titanium nitride layers. In the single stage version, the insulative oxide layer 26 and titanium nitride layer 24c are etched in a single stage, by introducing an etchant gas comprising carbon-fluoride gas and carbon-oxide gas into the process chamber 42, and generating a plasma from the etchant gas. The multiple stage version, comprises a first stage in which the insulative oxide layer 26 is etched using a plasma generated from carbon-fluoride gas, and a second stage in which the titanium nitride layer 24c is etched using a plasma generated from an etchant gas comprising carbon-fluoride gas and carbon-oxide gas. Suitable carbon-fluoride gases comprise CF.sub.3, CF.sub.4 , CH.sub.3 F, CHF.sub.3, C.sub.2 F.sub.6, C.sub.3 F.sub.8, C.sub.4 F.sub.8 or C.sub.4 F.sub.10, and suitable carbon-oxide gases comprise CO or CO.sub.2.

REFERENCES:
patent: 4863559 (1989-09-01), Douglas
patent: 5176790 (1993-01-01), Arleo et al.
U.S. patent application Ser. No. 08/138,060, entitled "Plasma Etch Apparatus with Heated Scavenging Surfaces," by Rice, et al., filed Oct. 15, 1993.

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