Etching solution for silicon oxide method of manufacturing a...

Details Etching solution for silicon oxide method of manufacturing a... Etching solution for silicon oxide method of manufacturing a...

2008-04-01

2008-04-01

Deo, Duy-Vu N. (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C438S689000, C438S704000, C216S089000, C216S083000, C134S001300

Reexamination Certificate

active

07351667

ABSTRACT:
An etching solution for silicon oxide may be used in a process for enlarging an opening formed through a silicon oxide layer. The etching solution includes about 0.2 to about 5.0 percent by weight of a hydrogen fluoride solution, about 0.05 to about 20.0 percent by weight of an ammonium fluoride solution, about 40.0 to about 70.0 percent by weight of an alkyl hydroxide solution and remaining water. The etching solution may etch the silicon oxide layer without damage to a metal silicide layer exposed by the opening.

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S. Wolf, Silicon Processing for the VLSI Era, vol. 1, Lattice Press (1986), pp. 532-533.

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