Etching process of CoSi.sub.2 layers

Details Etching process of CoSi.sub.2 layers Etching process of CoSi.sub.2 layers

1996-06-19

2000-11-28

Mulpuri, Savitri

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438586, 438604, 438683, H01L 2144

Patent

active

061534846

ABSTRACT:
The present invention relates to methods for controlling the etching rate of CoSi.sub.2 layers by adjusting the pH of an HF-based solution to obtain the desired etch rate. The pH of the HF-based solution may be adjusted by adding pH modifying chemicals to the solution. A further aspect of the invention is an improved method for manufacturing Schottky barrier infared detectors employing the controlled etching step. A method for reducing drain induced barrier lowering in an active transistor having a small gate length is also provided.

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