Etching of tungsten selective to titanium nitride

Details Etching of tungsten selective to titanium nitride Etching of tungsten selective to titanium nitride

2011-07-05

2011-07-05

Stark, Jarrett J (Department: 2823)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S734000, C438S694000, C438S710000, C438S714000, C438S715000, C257SE21219, C257S774000

Reexamination Certificate

active

07972966

ABSTRACT:
The present invention in one embodiment provides an etch method that includes providing a structure including a tungsten (W) portion and a titanium nitride (TiN) portion; applying a first etch feed gas of sulfur hexafluoride (SF6) and oxygen (O2), in which the ratio of sulfur hexafluoride (SF6) to oxygen (O2) ranges from 1:3.5 to 1:4.5; and applying a second etch feed gas of nitrogen trifluoride (NF3), helium (He) and chlorine (Cl2), in which the ratio of nitrogen trifluoride (NF3) to chlorine (Cl2) ranges from 1:5 to 2:5 and the ratio of helium (He) to nitrogen trifluoride (NF3) and chlorine (Cl2) ranges from 1:3 to 1:1.

REFERENCES:
patent: 5854104 (1998-12-01), Onishi et al.
patent: 7547635 (2009-06-01), Eppler et al.
patent: 2006/0125108 (2006-06-01), Gutsche et al.
patent: 2008/0014733 (2008-01-01), Liu
patent: 2010/0093151 (2010-04-01), Arghavani et al.

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