Compositions – Etching or brightening compositions – Inorganic acid containing
Patent
1999-06-29
2000-05-23
Utech, Benjamin L.
Compositions
Etching or brightening compositions
Inorganic acid containing
252 794, 252 793, 438745, 438756, 438757, H01L 21302
Patent
active
060662670
ABSTRACT:
Silicon nitride is etched employing a composition containing a fluoride containing compound, certain organic solvents, and water.
REFERENCES:
patent: 3676240 (1972-07-01), Retajczyk
patent: 3935117 (1976-01-01), Suzuki et al.
patent: 3979241 (1976-09-01), Maeda et al.
patent: 4203523 (1980-05-01), Gajda
patent: 4267013 (1981-05-01), Iida et al.
patent: 4269654 (1981-05-01), Deckert et al.
patent: 4285763 (1981-08-01), Coldren
patent: 4325984 (1982-04-01), Galfo et al.
patent: 4334349 (1982-06-01), Aoyama et al.
patent: 4351696 (1982-09-01), Radigan
patent: 4395304 (1983-07-01), Kern et al.
patent: 4444618 (1984-04-01), Saia et al.
patent: 4472237 (1984-09-01), Deslauriers et al.
patent: 4547260 (1985-10-01), Takada et al.
patent: 4692205 (1987-09-01), Sachdev et al.
patent: 4899767 (1990-02-01), McConnell et al.
patent: 4962049 (1990-10-01), Chang et al.
patent: 4971715 (1990-11-01), Armant et al.
patent: 4985113 (1991-01-01), Fujimoto et al.
patent: 4985990 (1991-01-01), Cronin et al.
patent: 4987101 (1991-01-01), Kaanta et al.
patent: 5012692 (1991-05-01), Ide et al.
patent: 5037506 (1991-08-01), Gupta et al.
patent: 5082518 (1992-01-01), Molinaro
patent: 5139624 (1992-08-01), Searson et al.
patent: 5217570 (1993-06-01), Kadomura
patent: 5308440 (1994-05-01), Chino et al.
patent: 5334332 (1994-08-01), Lee
patent: 5338416 (1994-08-01), Mlcak et al.
patent: 5348619 (1994-09-01), Bohannon et al.
patent: 5348627 (1994-09-01), Propst et al.
patent: 5350488 (1994-09-01), Webb
patent: 5387361 (1995-02-01), Kohara et al.
patent: 5407860 (1995-04-01), Stoltz et al.
patent: 5419779 (1995-05-01), Ward
patent: 5431766 (1995-07-01), Propst et al.
patent: 5461003 (1995-10-01), Havemann et al.
patent: 5468342 (1995-11-01), Nulty et al.
patent: 5475267 (1995-12-01), Ishii et al.
patent: 5533635 (1996-07-01), Man
patent: 5544776 (1996-08-01), Okuda et al.
patent: 5556482 (1996-09-01), Ward et al.
patent: 5571447 (1996-11-01), Ward et al.
patent: 5591299 (1997-01-01), Seaton et al.
patent: 5650041 (1997-07-01), Gotoh et al.
patent: 5698503 (1997-12-01), Ward et al.
patent: 5709756 (1998-01-01), Ward et al.
patent: 5756402 (1998-05-01), Jimbo et al.
patent: 5780363 (1998-07-01), Deckert et al.
patent: 5824601 (1998-10-01), Dao et al.
Anon, Flush Fluids for Ink Jet Ink Devices, Research Disclosure, Jan. 1991, No. 321.
"Etching SiO.sub.2 Films in Aqueous 0.49% HF", Somashekhar et al, J. Electrochem. Soc., vol. 143, No. 9, pp. 2885-2891, Sep. 1996.
El-Kareh, B., Fundamentals of Semiconductor Processing Technologies, Kluwer Academic Publishers, Norwell, MA, 1995: 565-571.
Jagannathan Rangarajan
Madden Karen P.
McCullough Kenneth J.
Okorn-Schmidt Harald F.
Pope Keith R.
Anderson Jay H.
International Business Machines - Corporation
Umez-Eronini Lynette T.
Utech Benjamin L.
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