Etching of silicon nitride

Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

438757, 252 791, H01L 2102, H01L 21306

Patent

active

059654651

ABSTRACT:
Silicon nitride is etched employing a composition containing a fluoride containing compound, certain organic solvents, and water.

REFERENCES:
patent: 3676240 (1972-07-01), Retajczyk
patent: 3979241 (1976-09-01), Maeda et al.
patent: 4230523 (1980-10-01), Gajda
patent: 4267013 (1981-05-01), Iida et al.
patent: 4285763 (1981-08-01), Coldren
patent: 4325981 (1982-04-01), Galfo et al.
patent: 4334349 (1982-06-01), Aoyama et al.
patent: 4351696 (1982-09-01), Radigan
patent: 4395304 (1983-07-01), Kern et al.
patent: 4444618 (1984-04-01), Saia et al.
patent: 4472237 (1984-09-01), Deslauriers et al.
patent: 4547260 (1985-10-01), Takada et al.
patent: 4692205 (1987-09-01), Sachdev et al.
patent: 4899797 (1990-02-01), McConnell et al.
patent: 4962049 (1990-10-01), Chang et al.
patent: 4971715 (1990-11-01), Armant et al.
patent: 4985113 (1991-01-01), Fujimoto et al.
patent: 4985990 (1991-01-01), Cronin et al.
patent: 4987101 (1991-01-01), Kaanta et al.
patent: 5012692 (1991-05-01), Ide et al.
patent: 5037506 (1991-08-01), Gupta et al.
patent: 5082518 (1992-01-01), Molinaro
patent: 5139624 (1992-08-01), Searson et al.
patent: 5217570 (1993-06-01), Kadomura
patent: 5308440 (1994-05-01), Chino et al.
patent: 5334332 (1994-08-01), Lee
patent: 5338416 (1994-08-01), Mlcak et al.
patent: 5348619 (1994-09-01), Bohannon et al.
patent: 5348627 (1994-09-01), Propst et al.
patent: 5350488 (1994-09-01), Webb
patent: 5387361 (1995-02-01), Kohara et al.
patent: 5407860 (1995-04-01), Stoltz et al.
patent: 5419779 (1995-05-01), Ward
patent: 5431766 (1995-07-01), Propst et al.
patent: 5461033 (1995-10-01), Havemann et al.
patent: 5468342 (1995-11-01), Nulty et al.
patent: 5475267 (1995-12-01), Ishii et al.
patent: 5533635 (1996-07-01), Man
patent: 5544776 (1996-08-01), Okuda et al.
patent: 5556482 (1996-09-01), Ward et al.
patent: 5571447 (1996-11-01), Ward et al.
patent: 5591299 (1997-01-01), Seaton et al.
patent: 5650041 (1997-07-01), Gotoh et al.
patent: 5698503 (1997-12-01), Ward et al.
patent: 5709756 (1998-01-01), Ward et al.
patent: 5780363 (1981-05-01), Deckert et al.
Anon, Flush Fluids for Ink Jet Ink Devices, Research Disclosure, Jan. 1991, No. 321.
"Etching SiO.sub.2 Films In Aqueous 0.49% HF", Somashekhar et al, J. Electrochem. Soc., vol. 143, No. 9, pp. 2885-2891, Sep. 1996.
El-Kareh, B., Fundamentals of Semiconductor Processing Technologies, Kluwer Academic Publishers, Norwell, MA, 1995: 565-571.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Etching of silicon nitride does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Etching of silicon nitride, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Etching of silicon nitride will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-651946

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.