Etching multi-shaped openings in silicon

Semiconductor device manufacturing: process – Chemical etching – Combined with coating step

Reexamination Certificate

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C438S703000, C438S706000, C438S710000

Reexamination Certificate

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06979652

ABSTRACT:
Openings of variable shape are made sequentially by alternately etching an opening in silicon and depositing a conformal fluorocarbon polymer on the sidewalls. This polymer protects the sidewalls of the opening from further etching. An isotropic etch can be carried out to change the profile of the etched feature, and for lift-off of the etched feature from the silicon substrate.

REFERENCES:
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patent: 5629226 (1997-05-01), Ohtsuki
patent: 5888887 (1999-03-01), Li et al.
patent: 6051503 (2000-04-01), Bhardwaj et al.
patent: 6110395 (2000-08-01), Gibson, Jr.
patent: 6187685 (2001-02-01), Hopkins et al.
patent: 2002/0148807 (2002-10-01), Zhao et al.

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