Semiconductor device manufacturing: process – Chemical etching – Combined with coating step
Reexamination Certificate
2005-12-27
2005-12-27
Norton, Nadine G. (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Combined with coating step
C438S703000, C438S706000, C438S710000
Reexamination Certificate
active
06979652
ABSTRACT:
Openings of variable shape are made sequentially by alternately etching an opening in silicon and depositing a conformal fluorocarbon polymer on the sidewalls. This polymer protects the sidewalls of the opening from further etching. An isotropic etch can be carried out to change the profile of the etched feature, and for lift-off of the etched feature from the silicon substrate.
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Khan Anisul
Kumar Ajay
Pamarthy Sharma V
Thekdi Sanjay
Applied Materials Inc.
Bach Joseph
Moser Patterson & Sheridan LLP
Norton Nadine G.
Umez-Eronini Lynette T.
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