Etching method of organic insulating film

Etching a substrate: processes – Gas phase etching of substrate – With measuring – testing – or inspecting

Reexamination Certificate

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Details

C216S060000, C216S067000, C438S706000, C438S710000, C438S725000

Reexamination Certificate

active

07396481

ABSTRACT:
This invention relates to a method for etching an organic insulating film used in the production of semiconductor devices. A sample to be etched on which a low dielectric constant organic insulating film is formed is etched by generating a plasma from hydrogen gas and nitrogen gas or ammonia gas, and controlling the gas flow rate and pressure so that the light emission spectral intensity ratio of hydrogen atom and cyan molecule in the plasma comes to a prescribed value. By this method, a low dielectric constant organic insulating film as an insulating film between layers can be etched without using any etch stop layer so that bottom surfaces of trenches and holes for electrical wiring become flat.

REFERENCES:
patent: 6080529 (2000-06-01), Ye
patent: 6548416 (2003-04-01), Han
patent: 6617244 (2003-09-01), Nishizawa
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patent: 2000-252359 (2000-09-01), None
patent: 0115213 (2001-01-01), None
patent: 2001-176853 (2001-06-01), None
patent: 2001-335932 (2001-12-01), None
patent: 2001-338909 (2001-12-01), None

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