Etching method having high silicon-to-photoresist selectivity

Details Etching method having high silicon-to-photoresist selectivity Etching method having high silicon-to-photoresist selectivity

2005-07-26

2005-07-26

Norton, Nadine G. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S714000, C438S717000, C438S718000, C438S719000, C438S724000, C438S725000

Reexamination Certificate

active

06921723

ABSTRACT:
Conventional methods of semiconductor fabrication and processing typically utilize three gas (e.g., HBr, Cl2and O2) and four gas (e.g., HBr, Cl2, O2and CF4) chemistries to perform gate etching in plasma process chambers. However, the silicon to resist selectivity achieved by these chemistries is limited to about 3:1. The present invention concerns a plasma source gas comprising SF6and one or more fluorine-containing gases selected from C3F6, C4F8, C5F8, CH2F2, CHF3, and C4F6(e.g., SF6and C4F8), allowing the use of a two gas etch chemistry that provides enhanced silicon to photoresist selectivity in gate etching processes.

REFERENCES:
patent: 4741799 (1988-05-01), Chen et al.
patent: 5994737 (1999-11-01), Sato
patent: 6083815 (2000-07-01), Tsai et al.
patent: 6136211 (2000-10-01), Qian et al.
patent: 6187685 (2001-02-01), Hopkins et al.
patent: 6232209 (2001-05-01), Fujiwara et al.
patent: 6297170 (2001-10-01), Gabriel et al.
patent: 6335275 (2002-01-01), Yabata et al.
patent: 6383938 (2002-05-01), Pandhumsoporn et al.
patent: 6620715 (2003-09-01), Blosse et al.

Affiliated with

Also associated with

Rating

Etching method having high silicon-to-photoresist selectivity does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Etching method having high silicon-to-photoresist selectivity, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Etching method having high silicon-to-photoresist selectivity will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3371470