Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-07-26
2005-07-26
Wilczewski, Mary (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S265000, C438S266000, C438S267000, C438S596000, C438S696000, C438S697000, C438S704000, C438S719000, C438S727000, C438S730000
Reexamination Certificate
active
06921695
ABSTRACT:
A split gate FET wordline electrode structure and method for forming the same including an improved polysilicon etching process including providing a semiconductor wafer process surface comprising first exposed polysilicon portions and adjacent oxide portions; forming a first oxide layer on the exposed polysilicon portions; blanket depositing a polysilicon layer on the first exposed polysilicon portions and adjacent oxide portions; forming a hardmask layer on the polysilicon layer; carrying out a multi-step reactive ion etching (RIE) process to etch through the hardmask layer and etch through a thickness portion of the polysilicon layer to form second polysilicon portions adjacent the oxide portions having upward protruding outer polysilicon fence portions; contacting the semiconductor wafer process surface with an aqueous HF solution; and, carrying out a downstream plasma etching process to remove polysilicon fence portions.
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Hsieh Chia-Ta
Huang Chen-Ming
Lo Chi-Hsin
Ouyang Hsiu
Tsai Chia-Shiung
Taiwan Semiconductor Manufacturing Co. Ltd.
Thomas Toniae M.
Tung & Associates
Wilczewski Mary
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