Etch with striation control

Details Etch with striation control Etch with striation control

2005-09-09

2009-02-17

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S637000, C438S942000, C438S949000, C257SE21023

Reexamination Certificate

active

07491647

ABSTRACT:
A method for etching a feature in an etch layer is provided. A patterned photoresist mask is formed over the etch layer with photoresist features with sidewalls wherein the sidewalls of the photoresist features have striations forming peaks and valleys. The striations of the sidewalls of the photoresist features are reduced. The reducing the striations comprises at least one cycle, wherein each cycle comprises etching back peaks formed by the striations of the sidewalls of the photoresist features and depositing on the sidewalls of the photoresist features. Features are etched into the etch layer through the photoresist features. The photoresist mask is removed.

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