Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2008-05-20
2008-05-20
Whitehead, Jr., Carl (Department: 2813)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C257SE21102
Reexamination Certificate
active
11325935
ABSTRACT:
A SiOC layer and/or a SiC layer of an etch stop layer may be improved by altering the process used to form them. In a bi-layer structure, a SiOC layer and/or a SiC layer may be improved to provide better reliability. A silicon carbide (SiC) layer may be used to form a single-layer etch stop layer, while also acting as a glue layer to improve interface adhesion. Preferably, the SiC layer is formed in a reaction chamber having a flow of substantially pure trimetholsilane (3MS) streamed into and through the reaction chamber under a pressure of less than about 2 torr therein. Preferably, the reaction chamber is energized with high frequency RF power of about 100 watts or more. Preferably, the SiOC layer is formed in a reaction chamber having a flow of 3MS and CO2, and is energized with low frequency RF power of about 100 watts or more.
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Chang Weng
Jang Syun-Ming
Liang Mong Song
Lin Simon S. H.
Dolan Jennifer M.
Jr. Carl Whitehead
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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