Etch-resistant deep ultraviolet resist process having an aromati

Details Etch-resistant deep ultraviolet resist process having an aromati Etch-resistant deep ultraviolet resist process having an aromati

1990-04-24

1992-12-22

Bowers, Jr., Charles L.

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

430189, 430192, 430193, 430326, 156643, 156646, G03F 7023, G03F 736

Patent

active

051733935

ABSTRACT:
A photoresist system that is easily structurable and, in particular, is suitable for the deep ultraviolet range is provided. An increased etching resistance to a halogen-containing plasma is produced in a lithographically generated photoresist structure by treatment with a reactant. The reactant comprises predominantly aromatic structures and includes reactive groups that are suitable for chemical reaction with further reactable groups of the photoresist. In an embodiment, the photoresist includes anhydride or epoxy groups that are suitable for structuring with deep ultraviolet light.

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patent: 4873176 (1989-10-01), Fisher
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Patent abstracts of Japan, vol. 5, No. 74 (E-57 746; May 16, 1981.
Fredericks et al., Deep UV Resists, IBM Technical Disclosure Bulletin, vol 23. No. 9, Feb. 1981, p. 4132.
Duran et al, Applications of Polyimides as Lithographic Resists, IBM Technical Disclosure Bulletin, vol. 25, No. 2, Jul. 1982, p. 768.
Endo et al, A New Photobleachable Positive Resist for KrF Excimer Laser Lithography, Japanese Journal of Applied Physics, vol. 27, No. 11 Nov. 1988, pp. L2219-L2222.

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