Etch back process using nitrous oxide

Details Etch back process using nitrous oxide Etch back process using nitrous oxide

2005-07-12

2005-07-12

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S710000, C438S711000, C438S780000

Reexamination Certificate

active

06916697

ABSTRACT:
A method for generating an organic plug within a via is described. The via resides in an integrated circuit (IC) structure having a silicon containing dielectric material. The method for generating the organic plug includes applying an organic compound such as a bottom antireflective coating. The organic compound occupies the via. The method then proceeds to feed a nitrous oxide (N2O) gas into a reactor and generates a plasma in the reactor. A significant portion of the organic compound is removed leaving behind an organic plug to occupy the via. The organic plug is typically generated during dual damascene processing.

REFERENCES:
patent: 5783493 (1998-07-01), Yeh et al.
patent: 5970376 (1999-10-01), Chen
patent: 6413877 (2002-07-01), Annapragada
patent: 6498112 (2002-12-01), Martin et al.
patent: 6521539 (2003-02-01), Zhou et al.
patent: 6617257 (2003-09-01), Ni et al.
patent: 2002/0111041 (2002-08-01), Annapragada et al.
patent: 2002/0182881 (2002-12-01), Ni et al.
patent: 2004/0038540 (2004-02-01), Li et al.

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