Epitaxially coated silicon wafer and method for producing...

Details Epitaxially coated silicon wafer and method for producing... Epitaxially coated silicon wafer and method for producing...

2006-09-08

2010-02-09

Hoang, Quoc D (Department: 2892)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S959000, C257S629000, C257SE21304, C257SE21230, C257SE21579

Reexamination Certificate

active

07659207

ABSTRACT:
Epitaxially coated silicon wafers, are coated individually in an epitaxy reactor by placing a wafer on a susceptor, pretreating under a hydrogen atmosphere, in and then with addition of an etching medium, and coating epitaxially on a polished front side, wherein an etching treatment of the susceptor is effected after a specific number of epitaxial coatings, and the susceptor is then hydrophilized. Silicon wafer produced thereby have a maximum local flatness value SFQRmaxof 0.01 μm to 0.035 μm relative to at least 99% of the partial regions of an area grid of measurement windows having a size of 26×8 mm2on the front side of the silicon wafer with an edge exclusion of 2 mm.

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English Abstract corresponding to JP 2003309707 A.
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