Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate
Reexamination Certificate
2006-09-15
2009-08-25
Monbleau, Davienne (Department: 2893)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
C438S492000, C438S905000, C257SE21214
Reexamination Certificate
active
07579261
ABSTRACT:
A multiplicity of silicon wafers polished at least on their front sides are provided and successively coated individually in an epitaxy reactor by a procedure whereby one of the wafers is placed on a susceptor in the epitaxy reactor, is pretreated under a hydrogen atmosphere at a first hydrogen flow rate, and with addition of an etching medium to the hydrogen atmosphere at a reduced hydrogen flow rate in a second step, is subsequently coated epitaxially on its polished front side, and removed from the reactor. An etching treatment of the susceptor follows a specific number of epitaxial coatings. Silicon wafers produced thereby have a global flatness value GBIR of 0.07-0.3 μm relative to an edge exclusion of 2 mm.
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English Derwent Abstract AN1999-519699 corresponding to DE19833257 C1.
English Derwent Abstract AN2004-786383 corresponding to DE10316214 A1.
Schauer Reinhard
Werner Norbert
Brooks & Kushman P.C.
Kolahdouzan Hajar
Monbleau Davienne
Siltronic AG
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