Epitaxial growth of relaxed silicon germanium layers

Details Epitaxial growth of relaxed silicon germanium layers Epitaxial growth of relaxed silicon germanium layers

2009-04-06

2010-02-23

Garber, Charles D (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Multiple layers

C438S763000, C257SE21090, C257SE21092, C257SE21102

Reexamination Certificate

active

07666799

ABSTRACT:
A relaxed silicon germanium structure comprises a silicon buffer layer produced using a chemical vapor deposition process with an operational pressure greater than approximately 1 torr. The relaxed silicon germanium structure further comprises a silicon germanium layer deposited over the silicon buffer layer. The silicon germanium layer has less than about 107threading dislocations per square centimeter. By depositing the silicon buffer layer at a reduced deposition rate, the overlying silicon germanium layer can be provided with a “crosshatch free” surface.

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