Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-12-18
2008-01-01
Ho, Tu-Tu (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S680000, C257S018000, C257SE21102
Reexamination Certificate
active
07314790
ABSTRACT:
The present invention provides a semiconductor material that has enhanced electron and hole mobilities that comprises a Si-containing layer having a <110> crystal orientation and a biaxial compressive strain. The term “biaxial compressive stress” is used herein to describe the net stress caused by longitudinal compressive stress and lateral stress that is induced upon the Si-containing layer during the manufacturing of the semiconductor material. Other aspect of the present invention relates to a method of forming the semiconductor material of the present invention. The method of the present invention includes the steps of providing a silicon-containing <110> layer; and creating a biaxial strain in the silicon-containing <110> layer.
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Chan, Victor et al., “High Speed 45nm Gate Length CMOSFETs Integrated Into a 90nm Bulk Technology Incorporating Strain Engineering,” IEEE, 2003.
Chan Victor
Fischetti Massimo V.
Hergenrother John M.
Ieong Meikei
Rengarajan Rajesh
Ho Tu-Tu
International Business Machines - Corporation
Scully , Scott, Murphy & Presser, P.C.
Tuchman, Esq. Ido
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